论文信息 - Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au+ ions - 字舞流文

Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au+ ions

A. Macková | S. Akhmadaliev | Zdenek Sofer | D. Sedmidubský | K. Klímová | R. Böttger | A. Jagerová | P. Malinskyˊ