Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

Highly strained (/spl Delta/a/a /spl sim/ 2.5%) In/sub 0.4/Ga/sub 0.6/As and In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/-quantum-well (QW) active lasers utilizing strain-compensating InGaP-GaAsP buffer layers and GaAs/sub 0.85/P/sub 0.15/ barrier layers, grown by metal-organic chemical vapor deposition (MOCVD), are demonstrated with lasing emission wavelength of 1.185 and 1.307 /spl mu/m, respectively. Threshold and transparency current density for the strain compensated InGaAsN QW lasers, with emission wavelength of 1.295 /spl mu/m, are measured to be as low as 290 A/cm/sup 2/ (L = 1500 /spl mu/m) and 110 A/cm/sup 2/, respectively, with characteristic temperature of T/sub 0/ and T/sub 1/ of 130 K and 400 K.

[1]  Kouji Nakahara,et al.  GaInNAs: a novel material for long-wavelength semiconductor lasers , 1997 .

[2]  Shunichi Sato,et al.  Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2000 .

[3]  Kenichi Iga,et al.  Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers , 2001 .

[4]  Shunichi Sato,et al.  1.21 µm Continuous-Wave Operation of Highly Strained GaInAs Quantum Well Lasers on GaAs Substrates , 1999 .

[5]  S. Illek,et al.  Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes , 2000, IEEE Photonics Technology Letters.

[6]  Kent D. Choquette,et al.  MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers , 2001, SPIE OPTO.

[7]  P. Dapkus,et al.  1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition , 1999, IEEE Photonics Technology Letters.

[8]  Wei Li,et al.  Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers , 2001 .

[9]  L. Mawst,et al.  High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers , 2001, IEEE Photonics Technology Letters.

[10]  Michael C. Larson,et al.  1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions , 2000 .

[11]  M. Weyers,et al.  12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells , 2001 .

[12]  Wolfgang Stolz,et al.  Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 /spl mu/m , 1999 .

[13]  P. Studenkov,et al.  Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers , 2000, IEEE Photonics Technology Letters.

[14]  Scott W. Corzine,et al.  Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (/spl lambda/ > 1.17 /spl mu/m) quantum-well lasers , 2002 .

[15]  Kenichi Iga,et al.  Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2001 .