Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V
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Tangsheng Chen | Jincheng Zhang | Shenglei Zhao | Kai Zhang | Yue Hao | Xiangdong Li | Weihang Zhang | Shuang Liu | Yinhe Wu | Yue Ai