High-quality NbN nanofilms on a GaN/AlN heterostructure

We demonstrate high-quality monocrystalline NbN films deposited by DC magnetron sputtering on a GaN/AlN waveguiding heterostructure. NbN layers with a thickness of 8 nm are grown along the [111] direction, and show two orientation domains with NbN(111) [2-1-1]//AlN (0001) [10-10] and NbN(111) [2-1-1]//AlN(0001) [01-10] epitaxial relationships. Our NbN films display a critical temperature of 13.2 K, with the superconducting transition taking place in a temperature range of only 0.7 K.

[1]  A. Sergienko,et al.  High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits , 2011, Nature communications.

[2]  R. Hadfield.  Single-photon detectors for optical quantum information applications , 2009 .

[3]  M. González-Herráez,et al.  Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs. , 2013, Optics express.

[4]  O. Okunev,et al.  Picosecond superconducting single-photon optical detector , 2001 .

[5]  Michael G. Tanner,et al.  Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon , 2010 .

[6]  J. Reintjes,et al.  CRITICAL FIELD MEASUREMENTS OF SUPERCONDUCTING NIOBIUM NITRIDE , 1965 .

[7]  T. M. Klapwijk,et al.  Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate , 2007 .

[8]  F. Julien,et al.  Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates , 2010 .

[9]  D. Anderson,et al.  Superconducting Hc‐Jc and Tc Measurements in the Nb–Ti–N, Nb–Hf–N, and Nb–V–N Ternary Systems , 1967 .

[10]  W. Pernice,et al.  NbTiN superconducting nanowire detectors for visible and telecom wavelengths single photon counting on Si3N4 photonic circuits , 2013, 1302.0786.

[11]  Yoshinori Uzawa,et al.  Improvement of the critical temperature of superconducting NbTiN and NbN thin films using the AlN buffer layer , 2010 .

[12]  James S. Speck,et al.  Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy , 2000 .

[13]  T. M. Klapwijk,et al.  Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films , 2013, 1310.3176.

[14]  V. Desmaris,et al.  Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layers , 2014 .

[15]  S. Dorenbos,et al.  Low noise superconducting single photon detectors on silicon , 2008 .

[16]  J. Brault,et al.  Gallium adsorption on (0001) GaN surfaces , 2003 .