Thermodynamic Comparison of InGaAsP Vapor Phase Epitaxy by Chloride, Hydride, and Metalorganic‐Chloride Methods

A thermodynamic comparison of composition controllability is made between three InGaAsP vapor phas epitaxial (VPE) methods: namely, chloride, hydride, and the newly proposed metal organic (MO)-chloride VPE processes for the growth of an alloy lattice matched to InP and emitting at 1.3 m. In order to discuss the dynamic aspects of an openflow system, the calculated model includes a completeness factor, e, for the reaction between a liquid metal source and gas phase, and a saturation factor, s, for the metal source with a Group V element. It is shown that control of the temperatures to within 2.4C makes it possible to keep the lattice mismatch less than 3 x 10 U in all three VPE systems. Control of the flow rates to within 1.2% in both chloride and hydride VPE systems and to within 0.3% in th MO-chloride system are sufficient for that purpose. It is found that the alloy composition varies greatly with e and s. A decrease in either e by 0.4% or s by 3.4% produces a lattice mismatch of 3 x 10 U.