Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
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A. Uedono | K. Asai | M. Yoneda | T. Murata | Y. Miyagawa | N. Hattori | M. Matsuura | Y. Nishida | T. Nakai