High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO 2 High-k Dielectric and Metal Gate

Recently, high mobility pMOSFETs were demonstrated on strained or relaxed SiGe-on-Si heterostructures [1-2] with Si cap/SiGe channel quantum well structures. In this work, without using Si cap process, we have fabricated high performance SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-k dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.