Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor

We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360cm^2/Vs) and high-mobility (7200cm^2/Vs) CNFET model with experimental data from nanotube and 45nm MOSFET, respectively, as well as existing compact models. Mobility and carrier concentration models are also developed to obtain a good matching with physical data. For a high mobility CNFET, we found that a maximum of 120@mA is obtained. In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD's analog behavioral model (ABM). A gain of as high as 5.2 is forecasted for an inverter of 80nm CNFET.

[1]  V. Arora,et al.  The ultimate ballistic drift velocity in carbon nanotubes , 2008 .

[2]  M. Tan,et al.  Quantum nanoelectronics: Challenges and opportunities , 2008, 2008 IEEE International Conference on Semiconductor Electronics.

[3]  M. Radosavljevic,et al.  Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors. , 2004, Physical review letters.

[4]  Razali Ismail,et al.  Current-voltage characteristics of a silicon nanowire transistor , 2009, Microelectron. J..

[5]  Mark S. Lundstrom,et al.  Nanoscale Transistors: Device Physics, Modeling and Simulation , 2005 .

[6]  Ismail Saad,et al.  Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor , 2007 .

[7]  V.K. Arora.  Ballistic quantum transport in nano devices and circuits , 2008, 2008 2nd IEEE International Nanoelectronics Conference.

[8]  Jing Guo,et al.  High-field quasiballistic transport in short carbon nanotubes. , 2003, Physical review letters.

[9]  V. Arora,et al.  The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor , 2009 .

[10]  Mario G. Ancona,et al.  High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate , 2005 .

[11]  P. Avouris,et al.  Carbon Nanotube Inter- and Intramolecular Logic Gates , 2001 .

[12]  Dekker,et al.  High-field electrical transport in single-wall carbon nanotubes , 1999, Physical review letters.

[13]  Hartmut Bossel,et al.  Modeling and simulation , 1994 .

[14]  Mark S. Lundstrom,et al.  High-κ dielectrics for advanced carbon-nanotube transistors and logic gates , 2002 .

[15]  Joachim Knoch,et al.  Carbon Nanotube Field-effect Transistors-The Importance of Being Small , 2006 .

[16]  Yu Cao,et al.  Compact modeling of carbon nanotube transistor for early stage process-design exploration , 2007, Proceedings of the 2007 international symposium on Low power electronics and design (ISLPED '07).

[17]  Jie Deng,et al.  A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking , 2007, IEEE Transactions on Electron Devices.

[18]  M. Fuhrer,et al.  Extraordinary Mobility in Semiconducting Carbon Nanotubes , 2004 .

[19]  Charles M. Lieber,et al.  Carbon nanotube-based nonvolatile random access memory for molecular computing , 2000, Science.

[20]  On the current delivery limit of semiconducting carbon nanotubes , 2007 .

[21]  Lise Anderson,et al.  Book Collection 2005 : Fundamentals of semiconductor devices / Betty , 2005 .

[22]  Sheng Wang,et al.  Fabrication of high performance top-gate complementary inverter using a single carbon nanotube and via a simple process , 2007 .

[23]  Frédéric Gaffiot,et al.  CNTFET Modeling and Reconfigurable Logic-Circuit Design , 2007, IEEE Transactions on Circuits and Systems I: Regular Papers.

[24]  Z. Dawei,et al.  A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs , 2005 .

[25]  J. A. del Alamo,et al.  Velocity saturation in the extrinsic device: a fundamental limit in HFET's , 1994 .

[26]  Jong-Ho Lee,et al.  Highly scalable saddle MOSFET for high-density and high-performance DRAM , 2005, IEEE Electron Device Letters.

[27]  H. Dai,et al.  High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. , 2004, Nano letters.