论文信息 - Cz grown 2-in. size Ce:Gd 3 (Al,Ga) 5 O 12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

Cz grown 2-in. size Ce:Gd 3 (Al,Ga) 5 O 12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

Abstract 2-in. size Ce 1%:Gd 3 (Al 1 − x Ga x ) 5 O 12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al–Ga was discussed.

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