TID Test of an 8-Gbit NAND Flash Memory

We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.

[1]  A. Visconti,et al.  A model for TID effects on floating Gate Memory cells , 2004, IEEE Transactions on Nuclear Science.

[2]  Allan H. Johnston,et al.  Radiation effects on advanced flash memories , 1999 .

[3]  R. Harboe-Sorensen,et al.  TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory , 2008, 2008 IEEE Radiation Effects Data Workshop.

[4]  Joe Brewer,et al.  Nonvolatile memory technologies with emphasis on flash , 2007 .

[5]  S.M. Guertin,et al.  Radiation Tests on 2Gb NAND Flash Memories , 2006, 2006 IEEE Radiation Effects Data Workshop.

[6]  Leif Z. Scheick,et al.  SEE and TID of emerging non-volatile memories , 2002, IEEE Radiation Effects Data Workshop.

[7]  Ashok Sharma,et al.  Advanced Semiconductor Memories , 2002 .

[8]  D.N. Nguyen,et al.  Single Event Effect Characterization of High Density Commercial NAND and NOR Nonvolatile Flash Memories , 2007, IEEE Transactions on Nuclear Science.

[9]  P. Murray,et al.  SEE and TID test results of 1 Gb flash memories , 2004, 2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774).

[10]  Leif Z. Scheick,et al.  TID, SEE and radiation induced failures in advanced flash memories , 2003, 2003 IEEE Radiation Effects Data Workshop.

[11]  Fritz Gliem,et al.  NAND- Flash Memory Technology in Mass Memory Systems for Space Applications , 2008 .

[12]  H.S. Kim,et al.  TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory , 2007, 2007 IEEE Radiation Effects Data Workshop.

[13]  Xiang Yu Semiconductor Memories , 2006 .