Intracavity Loss Modulation Of GalnAsP Lasers

GaInAsP/InP diode lasers with a monolithically integrated electroabsorption modulator have been fabricated from a conventional double-heterostructure wafer. The additional intracavity loss produced by operating the modulator near maximum reverse bias increased the laser threshold by a factor of as much as 2.9 relative to the threshold with the modulator open-circuited. Large depth of modulation of the laser output at frequencies up to 2.5 GHz, the measurement system limit, has been achieved by repetitively Q-switching the laser.