The effect of parasitic inductances in distributed amplifiers

The gain-bandwidth relations of distributed amplifiers (DA) are analyzed If is shown that the amplifier performance is uniquely related to the properties of the active elements and the electrical length of the transmission lines between them. It is proved that the parasitic inductance of the connections between the embedding network and the transistors strongly distorts the gain characteristics. The paper proposes the so-called V-shape connection structure which overcomes the above mentioned disadvantages.