Infrared detection properties of Zn-doped Si p-i-n diodes
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Double-injection p-i-n diodes containing appropriate trapping centers exhibit extremely light sensitive space charge limited current characteristics. Small variations in the i-region space charge induced by low light levels results in lalge changes in the forward current. The detectivity D* of typical Zn-doped devices is approximately 1013.
[1] N. Holonyak. Double Injection Diodes and Related DI Phenomena in Semiconductors , 1962, Proceedings of the IRE.