An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET
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Volker Pickert | Mohammed A. Elgendy | Mohamed S. A. Dahidah | Weichi Zhang | Xiang Wang | Graeme N. Thompson
[1] Haimeng Wu,et al. Design of an Advanced Programmable Current-Source Gate Driver for Dynamic Control of SiC Device , 2019, 2019 IEEE Applied Power Electronics Conference and Exposition (APEC).
[2] Daisuke Tanaka,et al. The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective , 2019, IEEE Power Electronics Magazine.
[3] Xiancheng Zheng,et al. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter , 2018 .
[4] Xiaojie Wu,et al. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules , 2019, IEEE Transactions on Power Electronics.
[5] Fred Wang,et al. Overview of high voltage sic power semiconductor devices: development and application , 2017 .
[6] Zhenxian Liang,et al. Design of a low parasitic inductance SiC power module with double-sided cooling , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
[7] Philippe Godignon,et al. A Survey of Wide Bandgap Power Semiconductor Devices , 2014, IEEE Transactions on Power Electronics.
[8] Kamalesh Hatua,et al. Parasitic Inductance and Capacitance-Assisted Active Gate Driving Technique to Minimize Switching Loss of SiC MOSFET , 2017, IEEE Transactions on Industrial Electronics.
[9] Li Ran,et al. Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation , 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
[10] T. V. Thang,et al. Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation , 2015, IEEE Transactions on Power Electronics.
[11] Krishna Shenai,et al. Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices , 2013 .
[12] Zhe Zhang,et al. Switching investigations on a SiC MOSFET in a TO-247 package , 2014, IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society.
[13] Yong Kang,et al. A review of SiC power module packaging: Layout, material system and integration , 2017 .
[14] Bing Ji,et al. Design and control of a bidirectional wireless charging system using GaN devices , 2019, 2019 IEEE Applied Power Electronics Conference and Exposition (APEC).
[15] Zheyu Zhang,et al. Overview of Silicon Carbide Technology: Device, Converter, System, and Application , 2016 .
[16] L. Tolbert,et al. Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration , 2014, IEEE Transactions on Power Electronics.
[17] Fei Wang,et al. Electrical Performance Advancement in SiC Power Module Package Design With Kelvin Drain Connection and Low Parasitic Inductance , 2019, IEEE Journal of Emerging and Selected Topics in Power Electronics.
[18] D. Holliday,et al. High-speed resonant gate driver with controlled peak gate voltage for silicon carbide MOSFETs , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).
[19] Ke Li,et al. Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors , 2018, IEEE Transactions on Power Electronics.