论文信息 - Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV - 字舞流文

Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV

R. Dupuis | R. Davis | M. Dudley | P. Hartlieb | J. Bai | J. Kolis | B. Skromme | U. Chowdhury | E. Michaels | B. Wagner | L. Chen