论文信息 - Coupling effects of dual SiGe power amplifiers for 802.11n MIMO applications

Coupling effects of dual SiGe power amplifiers for 802.11n MIMO applications

The large-signal and small-signal coupling effects of dual SiGe power amplifiers (PAs) on a single chip for 802.11n multiple input multiple output (MIMO) applications are demonstrated for the first time. Deep trench isolation and grounded guard ring are used for crosstalk isolation at both transistor and circuit levels. The equivalent small-signal coupling at 2.45 GHz between two PAs is -30 dB. The PA delivers 18.1 dBm and 16.6 dBm with 3% EVM (OFDM, 64-QAM) in single and dual PA operation modes, respectively. The EVM degradation becomes severe as the relative interfering power level increases

[1] Dongjun Lee,et al. Combined effects of RF impairments in the future IEEE 802. 11n WLAN systems , 2005, 2005 IEEE 61st Vehicular Technology Conference.

[2] Cheon Soo Kim,et al. Deep trench guard technology to suppress coupling between inductors in silicon RF ICs , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[3] K. Jenkins,et al. Effective crosstalk isolation through p/sup +/ Si substrates with semi-insulating porous Si , 2002, IEEE Electron Device Letters.

[4] Y. Tan,et al. Excellent cross-talk isolation, high-Q inductors, and reduced self-heating in a TFSOI technology for system-on-a-chip applications , 2002 .

[5] Gin-Kou Ma,et al. High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

[6] A. Chin,et al. Fabrication of very high resistivity Si with low loss and cross talk , 2000, IEEE Electron Device Letters.