Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

SiGe R. Loo, P. Verheyen, R. Rooyackers, C. Walczyk*, F.E. Leys, D. Shamiryan, P.P. Absil, T. Delande, A. Moussa, J.W. Weijtmans, R. Wise, V. Machkaoutsan, C. Arena, J. McCormack, S. Passefort, H. Sorada, A. Inoue, B.C. Lee, S. Hyun, S. Jakschik, and M. Caymax 1 IMEC, Kapeldreef 75, 3001 Leuven (Belgium), *also Universitat Siegen, Holderlinstrasse 35, 7068 Siegen (Germany), Texas Instruments Inc., 13560 North Central Expressway, Dallas (USA), ASM-Belgium, Kapeldreef 75, 3001 Leuven (Belgium), ASM-America, 3440 East University Drive, Phoenix, (USA), KLA-Tencor Corp. 160 Rio Robles, San Jose (USA), Matsushita assignee at IMEC, Samsung assignee at IMEC, Infineon assignee at IMEC