Electron microscopic and ion scattering studies of heteroepitaxial tin‐doped indium oxide films

The microstructure of heteroepitaxial tin‐doped indium oxide (ITO) films were studied in detail. The surface morphology of the heteroepitaxial ITO film consisted of square‐shaped, in‐plane oriented subgrains (∼300 A) in contrast to that of the polycrystalline film (characteristic grain‐subgrain structure). The subgrain boundaries were predominantly formed along the {110} planes in the ITO film and dislocations were observed primarily along the subgrain boundaries. Ion channeling measurements showed the dislocation density of this film to be approximately 3×1010/cm2, and the angular distribution of the ion channeling yield showed that the subgrains are aligned to within better than 0.3° (standard deviation).