Carrier recombination rates in narrow-gap InAs/Ga 1-x In x Sb-based superlattices

Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242;Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242;and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242~Received 6 October 1997; revised manuscript received 4 June 1998!We present a comparison of theoretical calculations and experimental measurements of the Auger recom-bination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations andmeasurements indicate that the rate depends on density as n