Polypyrrole thin-film field-effect transistor

The operation of a polypyrrole thin-film field-effect transistor at room temperature is reported. The polymer film is prepared by a technique based on chemical polymerization, which is capable of forming thin films with low roughness. The technique is compatible with conventional silicon processing and allows a lithographic definition of the polymer film geometry. Transport measurements indicate that the device works as Schottky barrier-type field-effect transistor. We further demonstrate that the polymer film is sensitive to oxygen exposure.

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