Effect of radiation-induced charge on 1/f noise in MOS devices

The 1/f noise in MOS transistors is measured as a function of gate and drain bias, total ionizing dose, and postirradiation biased annealing time. The transistors tested varied in size, radiation hardness, and process technology. The radiation-induced 1/f noise correlates strikingly with the oxide trap charge through irradiation and anneal, but not with interface-trap charge, for frequencies up to 10 kHz. This implies that oxide trapped charge is the predominant factor which leads to the increased 1/f noise in irradiated MOS devices. >

[1]  Ingemar Lundström,et al.  Low frequency noise in MOS transistors—II Experiments , 1968 .

[2]  P. S. Winokur,et al.  Physical Mechanisms Contributing to Device "Rebound" , 1984, IEEE Transactions on Nuclear Science.

[3]  S. Cristoloveanu,et al.  Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET's , 1986, IEEE Electron Device Letters.

[4]  Scofield,et al.  Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. , 1990, Physical review letters.

[5]  Chu Ax,et al.  Theory of oxide defects near the Si-SiO2 interface. , 1990 .

[6]  A. van der Ziel,et al.  Flicker Noise in Electronic Devices , 1979 .

[7]  P. S. Winokur,et al.  Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.

[8]  P. Winokur,et al.  Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .

[9]  D. Fleetwood,et al.  Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors , 1989 .

[10]  M. Weissman.  1/f noise and other slow, nonexponential kinetics in condensed matter. , 1988 .

[11]  G. Gildenblat,et al.  Effect of hot-electron stress on low frequency MOSFET noise , 1984, IEEE Electron Device Letters.

[12]  I. Lundström,et al.  Low frequency noise in MOS transistors—I Theory , 1968 .

[13]  F. H. Hielscher,et al.  Evidence of the Surface Origin of the 1f Noise , 1966 .

[14]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[15]  P. S. Winokur,et al.  Donor/acceptor nature of radiation-induced interface traps , 1988 .

[16]  Guido Groeseneken,et al.  Correlation between 1/f noise and interface state density at the Fermi level in field‐effect transistors , 1985 .

[17]  H. E. Boesch,et al.  The nature of the trapped hole annealing process , 1989 .