Fabrication and lasing characteristics of 1.3‐μm InGaAsP multiquantum‐well lasers

This paper reports the fabrication and lasing characteristics of 1.3‐μm InGaAsP multiquantum‐well (MQW) buried heterostructure (BH) lasers grown by liquid‐phase epitaxy (LPE) technique. The MQW active region consists of five InGaAsP well layers (λg=1.3‐μm, Lz∼200 A and InGaAsP barrier layers (λg=1.1 μm, d∼400–600 A). These lasers have threshold currents of 15–20 mA at 25 °C, external quantum efficiencies of 50% at 25 °C, and T0 values of 130–145 °K in the temperature range of less than 300 °K. The beam divergences perpendicular and parallel to the junction plane were in the narrow range of 10–13°. Furthermore, the polarization‐dependent gain‐current relationship between the TE and TM mode of InGaAsP MQW lasers has been investigated in detail for the first time.

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