All-fibre diode pumped, femtosecond chirped pulse amplification system

to be fabricated later in the process. The subcollector is isolated by an He+ ion implant. The base region is exposed by dry etching and contact is made with F”Au metal. The collector and emitter contacts are alloyed AuGe/Ni/Au. The technology employs a three-level metal scheme, which also includes NiCr resistors and MIM capacitors. Circuit fabrication was performed by standard optical lithography using a modified I-line GCA