Self-selective van der Waals heterostructures for large scale memory array
暂无分享,去创建一个
Bai-Sun Kong | Rong Zhao | Takashi Taniguchi | Kenji Watanabe | Geunwoo Hwang | Jinbao Jiang | Young-Min Kim | Bomin Joo | Woo Jong Yu | Linfeng Sun | Kenji Watanabe | T. Taniguchi | B. Kong | W. Yu | Rong Zhao | Young-Min Kim | G. Han | Heejun Yang | Yishu Zhang | Heejun Yang | Yishu Zhang | Geunwoo Hwang | Jinbao Jiang | Linfeng Sun | Gyeongtak Han | Bomin Joo | Kenji Watanabe
[1] Soo Min Kim,et al. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation , 2019, 2019 Compound Semiconductor Week (CSW).
[2] Dong Wang,et al. Selective growth of monolayer semiconductors for diverse synaptic junctions , 2018, 2D Materials.
[3] Young Hee Lee,et al. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation , 2018, Science.
[4] Yu Huang,et al. Solution-processable 2D semiconductors for high-performance large-area electronics , 2018, Nature.
[5] Eric Pop,et al. Electronic synapses made of layered two-dimensional materials , 2018, Nature Electronics.
[6] Yu Huang,et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions , 2018, Nature.
[7] Rong Zhao,et al. Synaptic Computation Enabled by Joule Heating of Single-Layered Semiconductors for Sound Localization. , 2018, Nano letters.
[8] Chunsen Liu,et al. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications , 2018, Nature Nanotechnology.
[9] Qi Liu,et al. Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018) , 2018 .
[10] Qi Liu,et al. Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects , 2018, Advanced materials.
[11] A. Ranjan,et al. Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films , 2018, Scientific Reports.
[12] Myungsoo Kim,et al. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides. , 2018, Nano letters.
[13] M. Chhowalla,et al. Structural and quantum-state phase transitions in van der Waals layered materials , 2017, Nature Physics.
[14] Subhasish Mitra,et al. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip , 2017, Nature.
[15] P. Ajayan,et al. Two-dimensional non-volatile programmable p-n junctions. , 2017, Nature nanotechnology.
[16] J. Yang,et al. Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors , 2017, Nature Communications.
[17] Xu Xu,et al. Three-dimensional holey-graphene/niobia composite architectures for ultrahigh-rate energy storage , 2017, Science.
[18] R. Waser,et al. Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride , 2017 .
[19] Catherine E. Graves,et al. Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application. , 2016, Nano letters.
[20] Hua Zhang,et al. Two-dimensional semiconductors for transistors , 2016 .
[21] Rakesh Aluguri,et al. Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays , 2016, IEEE Journal of the Electron Devices Society.
[22] Rino Micheloni,et al. 3D Flash Memories , 2016, Springer Netherlands.
[23] Guofa Cai,et al. Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications , 2016 .
[24] Kenji Watanabe,et al. Supplemental note : Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride , 2015 .
[25] Jun Lou,et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. , 2014, Nature materials.
[26] A. M. van der Zande,et al. Atomically thin p-n junctions with van der Waals heterointerfaces. , 2014, Nature nanotechnology.
[27] Li Ji,et al. Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography. , 2014, Nano letters.
[28] Kenji Watanabe,et al. Strong oxidation resistance of atomically thin boron nitride nanosheets. , 2014, ACS nano.
[29] Yongsung Ji,et al. Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture , 2013, Nature Communications.
[30] Mircea R. Stan,et al. Modeling Power Consumption of NAND Flash Memories Using FlashPower , 2013, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[31] Tuo-Hung Hou,et al. Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array , 2013, IEEE Transactions on Electron Devices.
[32] Yuchao Yang,et al. Complementary resistive switching in tantalum oxide-based resistive memory devices , 2012, 1204.3515.
[33] Xinran Wang,et al. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances , 2012 .
[34] A. Jen,et al. All‐Organic Photopatterned One Diode‐One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications (Adv. Mater. 6/2012) , 2012 .
[35] Hong Ma,et al. All‐Organic Photopatterned One Diode‐One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications , 2012, Advanced materials.
[36] Kinam Kim,et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.
[37] P. Kim. Graphene: Across the border. , 2010, Nature materials.
[38] Rainer Waser,et al. Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.
[39] Wei Lu,et al. Si/a-Si core/shell nanowires as nonvolatile crossbar switches. , 2008, Nano letters.
[40] Gotthard Seifert,et al. Vacancy migration in hexagonal boron nitride , 2007 .
[41] D. Lodge. Across the Border , 2019, My Journey Home.
[42] Марк Уэллс. Electric connecting device , 2004 .