Bipolar SCR ESD protection in a 0.25 /spl mu/m Si-Ge process using subcollector region modification

ESD operation of new Bipolar SCR (BSCR) devices for 0.25 /spl mu/m Si-Ge process with shallow epi-layer was studied. Two new BSCR device variants are proposed and validated using 2-D physical process and device simulation followed by the test chip based ESD measurements. Both variants rely on modifications to the subcollector to reduce P-SCR-emitter region isolation.

[2]  A. Concannon,et al.  Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

[3]  M. ter Beek,et al.  Stacked BSCR ESD protection for 250V tolerant circuits , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[4]  A. Amerasekera,et al.  Bipolar SCR ESD protection circuit for high speed submicron bipolar/BiCMOS circuits , 1995, Proceedings of International Electron Devices Meeting.

[5]  Steven H. Voldman.  Variable-trigger voltage ESD Power Clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) Silicon Germanium Heterojunction Bipolar Transistor with Carbon incorporation , 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.

[6]  V.A. Vashchenko,et al.  High performance SCRs for on-chip ESD protection in high voltage BCD processes , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..