论文信息 - Monolithic white LEDs: Approaches, technology, design

Monolithic white LEDs: Approaches, technology, design

The results of investigations of monolithic white InGaAlN LEDs with an active region containing several thin InGaN layers, emitting in the range from blue to yellow-green, and separated by short-period InGaN/GaN superlattices, are presented. The influence of the growth conditions and layer sequence in the active region on the optical properties of monolithic white LEDs was studied with the aim of controlling their color parameters.

[1] S. O. Usov,et al. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes , 2010 .

[2] A. L. Zakgeim,et al. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range , 2010 .

[3] N. V. Kryzhanovskaya,et al. Formation of composite InGaN/GaN/InAlN quantum dots , 2010 .

[4] N. V. Kryzhanovskaya,et al. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices , 2010 .