Effective recombination velocity at the NN+ interface

Abstract The effective recombination velocity S nn + at the nn + interface in buried layer ( nn + p ) and n epi- n + substrate structures has been studied using a model which takes into account the retarding outdiffusion region, recombination and bandgap narrowing. The variation of S nn + with diffusion length and bandgap narrowing has been estimated taking into consideration their doping-dependence. An attempt has been made to explain the wide range in the reported values for S nn + using the results of this study. Results indicate clearly the difference between the S nn + of the two structures. This difference arises from the collection by the p -substrate which accounts for a significant part of the S nn + of the buried layer structure over a wide range of values of diffusion length. This collection component of S nn + is sensitive to bandgap narrowing. On the other hand, the S nn + of the nn + structure is largely determined by the recombination in the outdiffusion region which is sensitive mainly to the value of diffusion length in that region. The component of S nn + representing recombination in the n + substrate is sensitive to bandgap narrowing. The present study indicates the dependence of S nn + on the structure and processing of the devices in which the nn + interface occurs.

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