论文信息 - CMOS transistor mismatch model valid from weak to strong inversion

CMOS transistor mismatch model valid from weak to strong inversion

A five parameter mismatch model continuous from weak to strong inversion is presented. The model is an extension of a previously reported one valid in the strong inversion region [1]. A mismatch characterization of NMOS and PMOS transistors for 30 different geometries has been done with this continuous model. The model is able to predict current mismatch with a mean relative error of 13.5% in the weak inversion region and 5% in strong inversion. This is verified for 12 different curves, sweeping V/sub G/, V/sub DS/,V/sub S/.

T. Serrano-Gotarredona | B. Linares-Barranco | T. Serrano-Gotarredona | B. Linares-Barranco

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