论文信息 - Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation - 字舞流文

Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

P. McMarr | K. Hobart | R. Stahlbush | S. Haney | F. Kub | M. Tadjer | E. Imhoff | H. Hughes