论文信息 - High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation

High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation

Besides high pressure or bulk crystal composition change, a size‐determined direct‐indirect transition can be obtained in an AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure (QWH), in fact, at higher energy (E∼2.05 eV) than in bulk AlxGa1−xAs (∼1.98 eV). Laser operation is demonstrated at 6700–6500 A on a QWH grown by metalorganic chemical vapor deposition (MOCVD).

[1] D. Scifres,et al. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition , 1982 .

[2] P. Dapkus,et al. The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures , 1981 .

[3] Karl Hess,et al. Band-structure-dependent transport and impact ionization in GaAs , 1981 .

[4] James J. Coleman,et al. High‐energy (Visible‐red) stimulated emission in GaAs , 1981 .

[5] N. Holonyak,et al. Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers , 1979 .

[6] H. M. Manasevit. The Use of Metal‐Organics in the Preparation of Semiconductor Materials: III . Studies of Epitaxial III ‐ V Aluminum Compound Formation Using Trimethylaluminum , 1971 .

[7] Marvin L. Cohen,et al. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures , 1966 .