Hot-carrier reliability characteristics of narrow-width MOSFETs
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[1] Hiroshi Iwai,et al. Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's , 1990 .
[2] C. Mazure,et al. Width-independent narrow nMOSFET reliability by split-well drive-in , 1990, IEEE Electron Device Letters.
[3] C. Mazure,et al. Field-implant-free isolation by double-well split drive-in , 1990, IEEE Electron Device Letters.
[4] M. Bourcerie,et al. Hot-carrier stressing damage in wide and narrow LDD NMOS transistors , 1989, IEEE Electron Device Letters.
[5] G. Groeseneken,et al. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs , 1988 .
[6] E. Takeda,et al. An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.