Silicon Bipolar LNAs in the X and Ku Bands

Two fully integrated silicon bipolar LNAs at 8 and 12 GHz are presented. Both circuits provide simultaneous noise and input impedance matching. Resonant loads, designed for 50-/spl Omega/ output matching, are also included. From an on-wafer test, the 8 and the 12-GHz LNAs exhibit a power gain of 11.5 and 8 dB and a noise figure of 2.6 and 4.7 dB, respectively. This performance was achieved with bias currents as low as 4 mA for each circuit. The two LNAs were fabricated in a 45-GHz pure bipolar technology. The paper explores the noise and input impedance self-matching trend of cascode topology in the X and Ku bands.

[1]  T.H. Lee,et al.  A 12 mW wide dynamic range CMOS front end for a portable GPS receiver , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[2]  Sorin P. Voinigescu,et al.  A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[3]  Robert G. Meyer,et al.  A 1-GHz BiCMOS RF front-end IC , 1994, IEEE J. Solid State Circuits.

[4]  Chung-Yu Wu,et al.  The design of a 3-V 900-MHz CMOS bandpass amplifier , 1997 .