Current sharing model of parallel connected IGBTs during turn-on

Paralleled IGBTs have drawn much attention to increase current capability in high power applications. However, the current imbalance must be carefully concerned, which is caused by device characteristic difference and asymmetric circuit. In this paper, a current sharing model during turn-on period is proposed on the basis of parameterized IGBT model. The discrepancy of device parameters can lead to the difference of turn-on delay time, then, the influence of different device parameters on current sharing can be analyzed quantitatively according to the model. Moreover, the model can be used to predict the mismatch of current sharing, and the compensation of delay time can be obtained directly when active gate control method is applied. Finally, the model is verified by the experiments of two parallel connected IGBT modules (1200V, 300A) with a high accuracy. And the application of this model is also presented in the paper.

[1]  A.D. Rajapakse,et al.  Electromagnetic transients simulation models for accurate representation of switching losses and thermal performance in power electronic systems , 2005, IEEE Transactions on Power Delivery.

[2]  J.W. Kolar,et al.  Active Gate Control for Current Balancing of Parallel-Connected IGBT Modules in Solid-State Modulators , 2007, IEEE Transactions on Plasma Science.

[3]  G. Venkataramanan,et al.  Investigation of parallel operation of IGBTs , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[4]  R. Letor,et al.  Static and dynamic behavior of paralleled IGBTs , 1992 .

[5]  Ulrich Schlapbach,et al.  Dynamic paralleling problems in IGBT module construction and application , 2010, 2010 6th International Conference on Integrated Power Electronics Systems.

[6]  C. Wong,et al.  EMTP modeling of IGBT dynamic performance for power dissipation estimation , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[7]  Zhengming Zhao,et al.  Current sharing of IGBT modules in parallel with thermal imbalance , 2010, 2010 IEEE Energy Conversion Congress and Exposition.

[8]  Charles S. Wong,et al.  Current sharing for paralleled IGBTs using statistics method , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[9]  Zhao Zhengming,et al.  IGBT modeling for analysis of complicated multi-IGBT Circuits , 2009, 2009 2nd International Conference on Power Electronics and Intelligent Transportation System (PEITS).

[10]  P. Hofer,et al.  Paralleling intelligent IGBT power modules with active gate-controlled current balancing , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.

[11]  D. Chamund,et al.  Review of series and parallel connection of IGBTs , 2006 .

[12]  Makoto Tachikawa,et al.  Neutral-point-clamped inverter with parallel driving of IGBTs for industrial applications , 1997, IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting.

[13]  Steffen Bernet,et al.  Simulation and experimental investigation of parallel connected IGBTs , 2010, 2010 IEEE International Conference on Industrial Technology.