Selection of a laser reliability assurance strategy for a long-life application

We are concerned with assuring the reliability of semiconductor lasers intended for an application in which the design lifetime is long, replacement or redundancy is impossible or impractical, and the failure of even a few lasers could be disastrous. In the search for a reliability assurance strategy that will meet our objectives, we have carefully examined the well-known and widely used bathtub and lognormal approaches. Based upon our understanding of the expected aging behavior of lasers, we propose an alternative reliability assurance strategy that we believe to be an improvement over the traditional approaches. The object is not how to make reliable lasers, but rather how to confidently predict, in a timely fashion, which lasers in a given population will endure beyond the intended system lifetime. Particular emphasis is placed upon initially imposed overstress regimes that address the anticipated presence of transient modes of depadation and infant failure modes with low thermal activation energies that may be invulnerable to detection during accelerated thermal aging. Since lasers degrade gradually rather than fail suddenly, comparable emphasis is placed upon monitoring the stabilized long-term degradation rates of the survivors of the overstress regimes so as to permit lifetime predictions of individual lasers.

[1]  M. J. Howes,et al.  Reliability and degradation : semiconductor devices and circuits , 1981 .

[2]  Koichi Wakita,et al.  Activation energy of degradation in GaAlAs double heterostructure laser diodes , 1981 .

[3]  Way Kuo,et al.  Facing the headaches of early failures: A state-of-the-art review of burn-in decisions , 1983 .

[4]  W. B. Joyce,et al.  Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double‐heterostructure lasers , 1976 .

[5]  Donald R. Earles,et al.  Reliability Physics (The Physics of Failure) , 1962 .

[6]  A. Thompson The reliability of a practical Ga 1-x Al x As laser device , 1979 .

[7]  D. S. Peck,et al.  The Analysis of Data from Accelerated Stress Tests , 1971 .

[8]  M. Ettenberg,et al.  The reliability of (AlGa)As CW laser diodes , 1980 .

[9]  Benjamin Epstein Sampling Procedures and Tables for Life and Reliability Testing Based on the Weibull Distribution (Hazard Rate Criterion)@@@Sampling Procedures and Tables for Life and Reliability Testing Based on the Weibull Distribution (Reliable Life Criterion) , 1964 .

[10]  Hajime Imai,et al.  Degradations of Optically-Pumped GaAlAs Double Heterostructures at Elevated Temperatures , 1979 .

[11]  Jr. R. Lynch Effect of screening tests on the lifetime statistics of injection lasers , 1980 .

[12]  A. S. Jordan A comprehensive review of the lognormal failure distribution with application to LED reliability , 1978 .

[13]  M. Abe,et al.  Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3µm wavelength , 1979, 1979 International Electron Devices Meeting.

[14]  Mitsuo Fukuda,et al.  Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging , 1983 .

[15]  Edward B. Fowlkes,et al.  Some Methods for Studying the Mixture of Two Normal (Lognormal) Distributions , 1979 .

[16]  L.C. Kimerling,et al.  Premature failure in Pt-GaAs IMPATTs - Recombination assisted diffusion as a failure mechanism , 1977, 1977 International Electron Devices Meeting.

[17]  J. C. Irvin,et al.  Failure Mechanisms and Reliability of Low-Noise GaAs FETs , 1978, 1978 8th European Microwave Conference.

[18]  R. H. Saul,et al.  The reliability of 302a numerics , 1978, The Bell System Technical Journal.

[19]  E. Kinsbron,et al.  Electromigration‐induced failure by edge displacement in fine‐line aluminum‐0.5% copper thin film conductors , 1983 .

[20]  W. J. Thompson,et al.  SF system: Transistors, diodes and components , 1970, Bell Syst. Tech. J..

[21]  Joseph B. Brauer,et al.  Microcircuit Accelerated Testing Using High Temperature Operating Tests , 1975, IEEE Transactions on Reliability.

[22]  Henry P Goode,et al.  SAMPLING PROCEDURES AND TABLES FOR LIFE AND RELIABILITY TESTING BASED ON THE WEIBULL DISTRIBUTION (RELIABLE LIFE CRITERION) , 1963 .

[23]  R. H. Saul,et al.  Reliability of DH Ga1-XAlX As LEDs For Lightwave Communications , 1981, 19th International Reliability Physics Symposium.

[24]  F. Nash,et al.  Accelerated facet erosion formation and degradation of (Al, Ga)As double-heterostructure lasers , 1980, IEEE Journal of Quantum Electronics.

[25]  B. W. Hakki,et al.  Degradation of CW GaAs double-heterojunction lasers at 300 K , 1973 .

[26]  R. L. Hartman,et al.  Methodology of accelerated aging , 1985, AT&T Technical Journal.

[27]  W. O. Schlosser,et al.  A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs , 1980, 18th International Reliability Physics Symposium.

[28]  R. Dixon,et al.  Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years , 1977 .

[29]  B. W. Hakki,et al.  1.3-µm Laser reliability determination for submarine cable systems , 1985, AT&T Technical Journal.

[30]  L. E. Miller,et al.  Reliability of semiconductor devices for submarine-cable systems , 1974 .

[31]  Yasuo Seki,et al.  Accelerated Life Test of AlGaAs-GaAs DH Lasers , 1977 .

[32]  Elisa T. Lee,et al.  Procedures for Selection of Semiconductor Diodes for Use in Undersea Cable Systems , 1972 .

[33]  L. Kimerling,et al.  Premature failure in Pt-GaAs IMPATT's—Recombination-assisted diffusion as a failure mechanism , 1978, IEEE Transactions on Electron Devices.

[34]  D. S. Peck,et al.  The reliability of semiconductor devices in the bell system , 1974 .

[35]  R. Dixon,et al.  Reliability of DH GaAs lasers at elevated temperatures , 1975 .

[36]  A. S. Jordan Confidence limits on the failure rate and a rapid projection nomogram for the lognormal distribution , 1984 .

[37]  D.S. Peck New concerns about integrated circuit reliability , 1979, IEEE Transactions on Electron Devices.

[38]  B. A. Unger ELECTROSTATIC DISCHARGE FAILURESOF SEMICONDUCTORDEVICES , 1981 .

[39]  Naoki Chinone,et al.  Acceleration of the gradual degradation in (GaAl)As double‐heterostructure lasers as an exponent of the value of the driving current , 1979 .

[40]  H. Kawano,et al.  Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation , 1982 .

[41]  W. Weibull A Statistical Distribution Function of Wide Applicability , 1951 .

[42]  Shinji Tsuji,et al.  Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers , 1980 .

[43]  Paul Anthony Kirkby,et al.  Enhanced degradation rates in temperature-sensitive Ga 1-x Al x As lasers , 1977 .

[44]  G. Watson,et al.  On the Possibility of Improving the Mean Useful Life of Items by Eliminating Those with Short Lives , 1961 .

[45]  P. Petroff,et al.  Defect structure introduced during operation of heterojunction GaAs lasers , 1973 .

[46]  Hiroshi Ishikawa,et al.  Accelerated aging test of Ga1−xAlxAs DH lasers , 1979 .

[47]  M. Ettenberg,et al.  A statistical study of the reliability of oxide‐defined stripe cw lasers of (AlGa)As , 1979 .

[48]  R.H. Saul,et al.  Reliability assurance for devices with a sudden-failure characteristic , 1983, IEEE Electron Device Letters.

[49]  C. G. Peattie,et al.  Elements of semiconductor-device reliability , 1974 .

[50]  M. Ettenberg,et al.  Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes , 1978 .

[51]  Wayne Nelson,et al.  Applied life data analysis , 1983 .

[52]  E.I. Gordon,et al.  Purging: A reliability assurance technique for new technology semiconductor devices , 1983, IEEE Electron Device Letters.

[53]  Osamu Wada,et al.  Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelength , 1981 .

[54]  B. Wakefield,et al.  The temperature dependence of degradation mechanisms in long‐lived (GaAl)As DH lasers , 1978 .

[55]  F. Reynolds Thermally accelerated aging of semiconductor components , 1974 .

[56]  Igor Bazovsky,et al.  Reliability Theory and Practice , 1961 .

[57]  R. H. Saul,et al.  Reliability of InGaAs photodiodes for SL applications , 1985, AT&T Technical Journal.

[58]  H. Takanashi,et al.  Growth mechanism of <100> dark-line defects in high radiance GaAlAs LED's , 1978, 1978 International Electron Devices Meeting.

[59]  A. R. Eckler A statistical approach to laser certification , 1985, AT&T Technical Journal.

[60]  W. M. Fox,et al.  SG undersea cable system: Semiconductor devices and passive components , 1978, The Bell System Technical Journal.

[61]  C. M. Melliar-Smith,et al.  Reliability and Failure Mechanisms of Electronic Materials , 1978 .