1.3-µm Laser reliability determination for submarine cable systems

To meet the stringent requirements of a submarine cable system, our 1.3-μm laser prequalification program has two objectives — first, to define the testing methodology that will accurately evaluate the potential reliability of the laser; and second, to obtain a preliminary indication of laser reliability on which the system configuration can be designed. Our testing methodology involves a combination of step-temperature, step-power, and isothermal testing over the temperature interval between 10 and 80°C and power levels of 1 to 5 mW per facet. Our results show that the long-term degradation process is thermally accelerated, with a median activation energy of 1 eV and a standard deviation of 0.13 eV. By using these activation energies, in conjunction with our measurements of degradation rates, we can project laser performance to 10°C, i.e., system operating temperature. It is estimated that the median time to failure for “light bulb” operation at 10°C is over 2 × 107 hours; and with 98-percent probability it is greater than 5 × 106 hours. Hence, when viewed strictly in terms of light bulb sources of stimulated power, these 1.3-μm lasers have adequate life. In addition, other potential operational malfunctions are being investigated, and they do not seem to change our basic conclusion about the usefulness of these 1.3-μm lasers for submarine cable application.

[1]  S. Tsuji,et al.  Reliability of InGaAsP/InP Buried Heterostructure Lasers , 1981 .

[2]  Niloy K. Dutta,et al.  Gain measurements in 1.3 µm InGaAsP-InP double heterostructure lasers , 1982 .

[3]  M. Abe,et al.  Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3µm wavelength , 1979, 1979 International Electron Devices Meeting.

[4]  Henry Kressel,et al.  Semiconductor Lasers and Heterojunction LEDs , 1977 .

[5]  Yoshiji Horikoshi,et al.  Lifetime of InGaAsP–InP and AlGaAs–GaAs DH Lasers Estimated by the Point Defect Generation Model , 1979 .

[6]  C. Zipfel,et al.  Cathodoluminescence evaluation of dark spot defects in InP/InGaAsP light‐emitting diodes , 1982 .

[7]  K. Endo,et al.  Lattice defect structure of degraded InGaAsP‐InP double‐heterostructure lasers , 1982 .

[8]  I. Umebu,et al.  Optically induced glide motion of misfit dislocations in InP/In1−xGaxAs1−yPy/InP double heterostructure , 1983 .

[9]  Hiroshi Ishikawa,et al.  Accelerated aging test of Ga1−xAlxAs DH lasers , 1979 .

[10]  H. Imai,et al.  Analysis of electrical, threshold, and temperature characteristics of InGaAsP/InP double- heterojunction lasers , 1981, IEEE Journal of Quantum Electronics.

[11]  Temperature dependence of threshold current in (GaIn)(AsP) DH lasers at 1.3 and 1.5 μm wavelength , 1981 .

[12]  B. Hakki Instabilities in output of injection lasers , 1979 .

[13]  S. Tsuji,et al.  Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µm , 1980 .

[14]  G. Henshall,et al.  Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers , 1980 .

[15]  T. Paoli Changes in the optical properties of CW (AlGa)As junction lasers during accelerated aging , 1977 .

[16]  L. Kimerling,et al.  Premature failure in Pt-GaAs IMPATT's—Recombination-assisted diffusion as a failure mechanism , 1978, IEEE Transactions on Electron Devices.

[17]  D. S. Peck,et al.  The reliability of semiconductor devices in the bell system , 1974 .

[18]  Shinji Tsuji,et al.  Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers , 1980 .

[19]  R. L. Hartman,et al.  Implementation of the proposed reliability assurance strategy for an InGaAsp/InP, planar mesa, buried heterostructure laser operating at 1.3 µm for use in a submarine cable , 1985, AT&T Technical Journal.

[20]  Y. Horikoshi,et al.  Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers , 1979 .

[21]  W. Bonner,et al.  Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP / InGaAsP Material System , 1982 .

[22]  Osamu Wada,et al.  Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelength , 1981 .

[23]  A. Sugimura,et al.  Band-to-band Auger recombination effect on InGaAsP laser threshold , 1981 .

[24]  S. Tsuji,et al.  Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasers , 1983, IEEE Journal of Quantum Electronics.