6-10 GHz ultra-wideband CMOS LNA

A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 µm CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6–10 GHz frequency band with a power consumption of 14 mW.

[1]  Anatol I. Zverev,et al.  Handbook of Filter Synthesis , 1967 .

[2]  Trung-Kien Nguyen,et al.  CMOS low-noise amplifier design optimization techniques , 2004, IEEE Transactions on Microwave Theory and Techniques.

[3]  A. Bevilacqua,et al.  An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers , 2004, IEEE Journal of Solid-State Circuits.

[4]  Changwan Kim,et al.  Ultra-wideband CMOS low noise amplifier , 2005 .

[5]  F. Zhang,et al.  Low-power programmable gain CMOS distributed LNA , 2006, IEEE Journal of Solid-State Circuits.

[6]  Shen-Iuan Liu,et al.  A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers , 2007, IEEE Journal of Solid-State Circuits.