论文信息 - Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier

Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier

The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at -43/spl deg/C to 5.0 dB at 150degC.

I. Adesida | O. Aktas | V. Kumar | J.W. Lee | R.S. Schwindt

[1] A. Chini,et al. A C-band high-dynamic range GaN HEMT low-noise amplifier , 2004, IEEE Microwave and Wireless Components Letters.

[2] Ilesanmi Adesida,et al. A comparative study of surface passivation on AlGaN/GaN HEMTs , 2002 .

[3] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[4] I. Adesida,et al. Low resistance Ti/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructure field effect transistors , 2002 .

[5] P. Janke,et al. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE , 2000 .