ZnO Schottky barriers and Ohmic contacts

ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts...

[1]  C. Pandarinath,et al.  Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces , 2005 .

[2]  Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces , 2008 .

[3]  Sejoon Lee,et al.  Impact of defect distribution on transport properties for Au/ZnO Schottky contacts formed with H2O2-treated unintentionally doped n-type ZnO epilayers , 2010 .

[4]  John Robertson,et al.  Fermi level pinning by defects in HfO2-metal gate stacks , 2007 .

[5]  F. A. Padovani,et al.  Chapter 2 The Voltage–Current Characteristic of Metal–Semiconductor Contacts , 1971 .

[6]  B. Svensson,et al.  Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO , 2007 .

[7]  R. Daniels,et al.  SYSTEMATICS OF CHEMICAL STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR–METAL INTERFACES , 1983 .

[8]  Yujia Zeng,et al.  Formation Mechanisms of Low-Resistivity Ni ∕ Pt Ohmic Contacts to Li-Doped p-Type ZnO , 2009 .

[9]  R. T. Tung Recent advances in Schottky barrier concepts , 2001 .

[10]  Al/Au ohmic contact to n-ZnO by dc sputtering , 2009 .

[11]  David P. Norton,et al.  Recent progress in processing and properties of ZnO , 2003 .

[12]  Steven M. Durbin,et al.  Metal Schottky diodes on Zn-polar and O-polar bulk ZnO , 2006 .

[13]  Kyoung-Kok Kim,et al.  Ohmic Contact Behavior of Pt/Ni/Au to p -ZnO , 2006 .

[14]  N. Emanetoglu,et al.  Schottky diode with Ag on (112̄0) epitaxial ZnO film , 2002 .

[15]  D. Look,et al.  Residual Native Shallow Donor in ZnO , 1999 .

[16]  Seong-Ju Park,et al.  Thermally Stable and Low Resistance Re/Ti/Au Ohmic Contacts to n ­ ZnO , 2005 .

[17]  Marius Grundmann,et al.  Mean barrier height of Pd Schottky contacts on ZnO thin films , 2006 .

[18]  Y. Lin,et al.  Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN , 2000 .

[19]  G. Heiland,et al.  Polar surfaces of zinc oxide crystals , 1969 .

[20]  Qi-Kun Xue,et al.  Wet chemical etching of ZnO film using aqueous acidic salt , 2007 .

[21]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[22]  G. Margaritondo,et al.  Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces , 1988 .

[23]  Robert F. Davis,et al.  Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001̄) , 2003 .

[24]  C. R. Crowell,et al.  Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers , 1969 .

[25]  Hongen Shen,et al.  ZnO Schottky ultraviolet photodetectors , 2001 .

[26]  V. Walle,et al.  Hydrogen as a cause of doping in zinc oxide , 2000 .

[27]  Kazuhiro Hane,et al.  Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate , 2007 .

[28]  S. M. Durbin,et al.  Silver oxide Schottky contacts on n-type ZnO , 2007 .

[29]  B. Svensson,et al.  Zinc oxide: bulk growth, role of hydrogen and Schottky diodes , 2009 .

[30]  L. J. Mandalapu,et al.  Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy , 2005 .

[31]  T. Seong,et al.  Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer , 2004 .

[32]  Kyoung-Kok Kim,et al.  Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO , 2001 .

[33]  T. Seong,et al.  Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers , 2000 .

[34]  Jun Liu,et al.  Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. , 2007, Nature nanotechnology.

[35]  B. Svensson,et al.  Vacancy clustering and acceptor activation in nitrogen-implanted ZnO , 2008 .

[36]  D. A. King,et al.  The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis , 1981 .

[37]  F. Ren,et al.  Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO , 2005 .

[38]  F. Ren,et al.  Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films , 2004 .

[39]  David C. Look,et al.  Introduction and recovery of point defects in electron-irradiated ZnO , 2005 .

[40]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[41]  L. Brillson Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films , 2001 .

[42]  C. Mead Surface barriers on ZnSe and ZnO , 1965 .

[43]  M. Grundmann,et al.  Lateral homogeneity of Schottky contacts on n-type ZnO , 2004 .

[44]  ZnO-BASED NANOWIRES , 2007 .

[45]  T. Seong,et al.  Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO , 2005 .

[46]  A. Ohtomo,et al.  High Electron Mobility Exceeding 104 cm2 V-1 s-1 in MgxZn1-xO/ZnO Single Heterostructures Grown by Molecular Beam Epitaxy , 2008 .

[47]  Paul H. Holloway,et al.  Ohmic Contacts to ZnSe-Based Materials , 1996 .

[48]  K. Moazzami,et al.  Properties of electrical contacts on bulk and epitaxial n-type ZnO , 2005 .

[49]  François Léonard,et al.  Size-dependent effects on electrical contacts to nanotubes and nanowires. , 2006, Physical review letters.

[50]  G. Margaritondo,et al.  Atomic and Electronic Structure of InP-Metal Interfaces: A Prototypical III-V Compound Semiconductor, , 1981 .

[51]  L. Brillson,et al.  Vacancy defect and defect cluster energetics in ion-implanted ZnO , 2010 .

[52]  D. Look,et al.  Role of subsurface defects in metal-ZnO(0001¯) Schottky barrier formation , 2007 .

[53]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[54]  F. Ren,et al.  Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO , 2004 .

[55]  S. Diplas,et al.  Surface passivation and interface reactions induced by hydrogen peroxide treatment of n-type ZnO (0001¯) , 2009 .

[56]  F. Ren,et al.  Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO , 2003 .

[57]  M. Grundmann,et al.  ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates , 2008 .

[58]  Masashi Kawasaki,et al.  Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO , 2008 .

[59]  T. Seong,et al.  Inductively-coupled-plasma reactive ion etching of ZnO using BCl3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO , 2004 .

[60]  Y. Ryu,et al.  Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnO , 2003 .

[61]  Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO , 2010 .

[62]  S. Jokela,et al.  Defects in ZnO , 2009 .

[63]  R. Davis,et al.  In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces , 2004 .

[64]  T. Seong,et al.  Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO , 2002 .

[65]  S. M. Durbin,et al.  Influence of oxygen vacancies on Schottky contacts to ZnO , 2008 .

[66]  T. Seong,et al.  Electrical and Structural Properties of Ti/Au Ohmic Contacts to n ­ ZnO , 2001 .

[67]  Leonard J. Brillson,et al.  Surfaces and Interfaces of Electronic Materials: Brillson/Surfaces , 2010 .

[68]  Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment , 2008 .

[69]  L. Brillson Chemical reactions and local charge redistribution at metal-CdS and CdSe interfaces , 1978 .

[70]  D. Hwang,et al.  Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation , 2007 .

[71]  William L. Warren,et al.  Correlation between photoluminescence and oxygen vacancies in ZnO phosphors , 1996 .

[72]  N. Emanetoglu,et al.  Nonalloyed Al ohmic contacts to MgxZn1−xO , 2002 .

[73]  D. C. Reynolds,et al.  Role of Near-Surface States in Ohmic-Schottky Conversion of Au Contacts to ZnO , 2005 .

[74]  A. Ohtomo,et al.  Schottky contact on a ZnO (0001) single crystal with conducting polymer , 2007 .

[75]  G. Yi,et al.  Low-resistance Ti/Al ohmic contact on undoped ZnO , 2002 .

[76]  J. Boeckl,et al.  Anomalous Capture and Emission from Internal Surfaces of Semiconductor Voids: Nanopores in SiC , 2004 .

[77]  Leonard J. Brillson,et al.  The structure and properties of metal-semiconductor interfaces , 1982 .

[78]  Carver A. Mead,et al.  Metal-semiconductor surface barriers , 1966 .

[79]  S. M. Durbin,et al.  Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO , 2007 .

[80]  Jürgen H. Werner,et al.  Barrier inhomogeneities at Schottky contacts , 1991 .

[81]  Martin L. Green,et al.  Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films , 1985 .

[82]  Ni/Au Ohmic Contacts to p-Type N-Doped ZnO , 2008 .

[83]  Rommel Noufi,et al.  SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state‐of‐the‐art ZnO/CdS/Cu(In1−xGax)Se2 solar cells , 2005 .

[84]  G. Margaritondo,et al.  Chemical basis for InP‐metal Schottky‐barrier formation , 1981 .

[85]  W. M. Haynes CRC Handbook of Chemistry and Physics , 1990 .

[86]  H. Makino,et al.  Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy , 2005 .

[87]  S. T. Lee,et al.  p-Type ZnO nanowire arrays. , 2008, Nano letters.

[88]  David P. Norton,et al.  Low specific contact resistance Ti∕Au contacts on ZnO , 2006 .

[89]  F. Ren,et al.  Thermally Stable TiB2 Ohmic Contacts on n-ZnO , 2006 .

[90]  D D Wagman,et al.  Selected values of chemical thermodynamic properties , 1952 .

[91]  C. H. Park,et al.  Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide. , 2004, Physical review letters.

[92]  David C. Look,et al.  Recent Advances in ZnO Materials and Devices , 2001 .

[93]  Han‐Ki Kim,et al.  Electrical and Interfacial Properties of Nonalloyed Ti/Au Ohmic and Pt Schottky Contacts on Zn-Terminated ZnO , 2006 .

[94]  D. Look,et al.  Dominant effect of near-interface native point defects on ZnO Schottky barriers , 2007 .

[95]  David P. Norton,et al.  Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO , 2004 .

[96]  J. Kim,et al.  Selection of non-alloyed ohmic contacts for ZnO nanostructure based devices , 2007 .

[97]  Bertram Schwartz,et al.  Ohmic contacts to semiconductors , 1969 .

[98]  F. Zhuge,et al.  ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO , 2005 .

[99]  N. Emanetoglu,et al.  Ta/Au ohmic contacts to n-type ZnO , 2003 .

[100]  Leonard J. Brillson,et al.  Surfaces and Interfaces of Electronic Materials , 2010 .

[101]  Thermally driven defect formation and blocking layers at metal-ZnO interfaces , 2007 .

[102]  D. Look,et al.  Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy , 2008 .

[103]  O. Nur,et al.  The effect of the post-growth annealing on the electroluminescence properties of n-ZnO nanorods/p-GaN light emitting diodes , 2010 .

[104]  L. J. Mandalapu,et al.  Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type Zno , 2007 .

[105]  S. M. Durbin,et al.  Oxidized noble metal Schottky contacts to n-type ZnO , 2009 .

[106]  F. Ren,et al.  Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition , 2005 .

[107]  D. C. Reynolds,et al.  Remote hydrogen plasma doping of single crystal ZnO , 2004 .

[108]  C. Mead,et al.  Surface Barriers on Zinc Oxide , 1970 .

[109]  Han‐Ki Kim,et al.  Low resistance nonalloyed Al-based ohmic contacts on n-ZnO:Al , 2007 .

[110]  David P. Norton,et al.  Electrical characteristics of Au and Ag Schottky contacts on n-ZnO , 2003 .

[111]  Microstructural investigation of Ti/Au ohmic contacts on Ga doped single crystalline n-ZnO films , 2010 .

[112]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[113]  F. Ren,et al.  Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning , 2004 .

[114]  G. Ceder,et al.  First-principles study of native point defects in ZnO , 2000 .

[115]  Seong Jun Park,et al.  Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer , 2003 .

[116]  Seong-Ju Park,et al.  Formation of low resistance nonalloyed Ti/Au ohmic contacts to n-type ZnO by KrF excimer laser irradiation , 2005 .

[117]  Pt-Ga ohmic contacts to n-ZnO using focused ion beams , 2001 .

[118]  Georg Kresse,et al.  Defect energetics in ZnO: A hybrid Hartree-Fock density functional study , 2008 .

[119]  F. Ren,et al.  Ti /Au n-type Ohmic contacts to bulk ZnO substrates , 2005 .

[120]  Jun Huang,et al.  P-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes , 2008 .

[121]  Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer , 2008 .

[122]  Kenji Matsumoto,et al.  Polarity-dependent photoemission spectra of wurtzite-type zinc oxide , 2009 .

[123]  Palladium Schottky barrier contacts to hydrothermally grown n-ZnOand shallow electron states , 2004 .

[124]  D. Look,et al.  Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces , 2009 .

[125]  David P. Norton,et al.  ITO∕Ti∕Au Ohmic contacts on n-type ZnO , 2006 .

[126]  H. Michaelson The work function of the elements and its periodicity , 1977 .

[127]  Kyoung-Kok Kim,et al.  Formation and Effect of Thermal Annealing for Low-Resistance Ni/Au Ohmic Contact to Phosphorous-Doped p-Type ZnO , 2005 .

[128]  I. Lindau,et al.  New and unified model for Schottky barrier and III–V insulator interface states formation , 1979 .

[129]  P. Holloway,et al.  Indium Ohmic Contacts to n-ZnSe, , 1992 .

[130]  Masashi Kawasaki,et al.  Quantum Hall Effect in Polar Oxide Heterostructures , 2007, Science.

[131]  D. Look,et al.  Zn- and O-face polarity effects at ZnO surfaces and metal interfaces , 2008 .

[132]  K. Sugioka,et al.  Nonalloy Ohmic contact fabrication in a hydrothermally grown n-ZnO (0001) substrate by KrF excimer laser irradiation , 2000 .