Structural and optical properties of GaN:Eu nanoparticles synthesized by simple ammonification method

[1]  A. Steckl,et al.  Effect of growth conditions on Eu3+ luminescence in GaN , 2010 .

[2]  L. Jia,et al.  Preparation and optical properties of GaN nanocrystalline powders , 2009 .

[3]  E. Xie,et al.  Room temperature visible green luminescence from a-GaN:Er film deposited by DC magnetron sputtering , 2008 .

[4]  E. Xie,et al.  Optical Properties of Nanocrystalline GaN Films Prepared by Annealing Amorphous GaN in Ammonia , 2008 .

[5]  S. T. Lee,et al.  418 cm -1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration? , 2007 .

[6]  J. Misiewicz,et al.  Optical investigation of the emission lines for Eu3+ and Tb3+ ions in the GaN powder host , 2007 .

[7]  J. Misiewicz,et al.  Energy Transfer Between Nanocrystalline Host and Eu3 + Ions in GaN : Eu3 + Powders , 2007 .

[8]  J. Misiewicz,et al.  Synthesis and optical properties of Eu3+ and Tb3+ doped GaN nanocrystallite powders , 2006 .

[9]  M. Lipson,et al.  Photoluminescence and cathodoluminescence analyses of GaN powder doped with Eu , 2006 .

[10]  S. Shirakata,et al.  Photoluminescence of Eu-doped GaN thin films prepared by radio frequency magnetron sputtering , 2004 .

[11]  J. Misiewicz,et al.  Yellow emission of GaN nanocrystals embedded in a silica xerogel matrix , 2004 .

[12]  P. Holloway,et al.  Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium , 2004 .

[13]  P. Holloway,et al.  Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering , 2003 .

[14]  P. Holloway,et al.  Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er , 2003 .

[15]  Paul H. Holloway,et al.  Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence , 2003 .

[16]  A. Steckl,et al.  Spectral and time-resolved photoluminescence studies of Eu-doped GaN , 2003 .

[17]  A. Steckl,et al.  Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices , 2002 .

[18]  Yoshio Bando,et al.  Synthesis, Raman scattering and defects of β-Ga2O3 nanorods , 2002 .

[19]  J. McKittrick,et al.  Microstructural properties of Eu-doped GaN luminescent powders , 2002 .

[20]  S. Denbaars,et al.  Infrared and Raman-scattering studies in single-crystalline GaN nanowires , 2001 .

[21]  L. Adamowicz,et al.  Raman scattering study of gallium nitride heavily doped with manganese , 2001 .

[22]  K. H. Chen,et al.  Catalytic growth and characterization of gallium nitride nanowires. , 2001, Journal of the American Chemical Society.

[23]  A. Steckl,et al.  Optoelectronic Properties and Applications of Rare-Earth-Doped GaN , 1999 .

[24]  Carlos,et al.  Emission spectra and local symmetry of the Eu3+ ion in polymer electrolytes. , 1994, Physical review. B, Condensed matter.

[25]  Lozykowski Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors. , 1993, Physical review. B, Condensed matter.

[26]  H. Murai,et al.  Raman and x‐ray scattering from ultrafine semiconductor particles , 1987 .

[27]  J W Orton,et al.  Group III nitride semiconductors for short wavelength light-emitting devices , 1998 .