Nonlinear and fully distributed field effect transistor modelling procedure using time-domain method

An accurate and efficient modelling approach for field effect transistors (FET) as nonlinear active transmission lines is presented. The nonlinear active multiconductor transmission line (NAMTL) equations are obtained by considering the transistor as three active coupled lines operating in a nonlinear regime. This modelling procedure accurately spots the effect of wave propagation along the device electrodes. This modelling approach is applied to an FET by solving the NAMTL equations using a finite-difference time-domain technique. The results of this model are compared with the semi-distributed (slice) model. This method produces more accurate results than the slice model, especially at high frequencies.

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