Total dose radiation hardness of diamond‐based silicon‐on‐insulator structures

Total dose radiation hardness measurements were performed on silicon‐on‐insulator (SOI) test structures where the insulator is chemical vapor deposited (CVD) diamond. These measurements represent a first look at the fundamental radiation response of low‐pressure CVD synthetic diamond materials for SOI applications. Silicon/diamond metal‐insulator‐semiconductor (MIS) capacitors were subjected to both cobalt‐60 and 10 keV x‐ray irradiation up to doses of 1×107 rad (SiO2) while under positive, negative, and zero bias conditions. The diamond insulators used in these devices were found to be free from extensive hole or electron trapping. This behavior is consistent with the high electron and hole mobility of the polycrystalline diamond insulator.