Electrical properties of zirconium diselenide single crystals grown by iodine transport method
暂无分享，去创建一个
[1] Xu-Guang Zheng,et al. Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2 , 1989 .
[2] J. Pannetier,et al. Dependence of the physical properties of pure and lithium intercalated zirconium diselenide on the host lattice stoichiometry , 1987 .
[3] S. Tanuma,et al. T 2 -Dependence of Electrical Resistivity in TiS 2 and ZrSe 2 , 1982 .
[4] H. Tributsch. Photo-intercalation: Possible application in solar energy devices , 1980 .
[5] A. Balchin,et al. Growth conditions and crystal structure parameters of layer compounds in the series ZrSxSe2–x , 1973 .
[6] Robert M. White,et al. Infrared-Reflectance Spectra of Layered Group-IV and Group-VI Transition-Metal Dichalcogenides , 1973 .
[7] B. Tanner,et al. Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniques , 1972 .
[8] A. Gleizes,et al. Nonstoichiometry in the ZrSe2 phase , 1970 .
[9] P. Lee,et al. On the optical properties of some layer compounds , 1969 .
[10] P. Lee,et al. Negative resistance and switching effect in the single crystal layer compounds SnS2 and ZrS2 , 1969 .
[11] D. Greenaway,et al. Preparation and optical properties of group IV–VI2 chalcogenides having the CdI2 structure , 1965 .
[12] H. Hahn,et al. Über das System Zirkon/Selen , 1959 .
[13] F. McTaggart,et al. The sulphides, Selenides, and Tellurides of Titanium, Zirconium, Hafnium, and Thorium. I. Preparation and characterization , 1958 .