Characteristics of a 60 GHz MMIC mixer with an open stub microstrip line

In this article, 60 GHz MMIC down-conversion mixers for a 60 GHz communication system are designed and fabricated on-chip using a 0.12 μm GaAs PHEMT process technology with an fT of 78 GHz and fmax of 190 GHz.The characteristics of a 60 GHz monolithic cascode mixer with an open stub microstrip line are compared with those of a 60 GHz monolithic cascode mixer without an open stub microstrip line, which are integrated on-chip including matching and bias circuits. The 60 GHz monolithic cascode mixer with an open stub microstrip line measured at RF 60 GHz show a conversion gain of −16 dB, LO to RF isolation of 21.5 dB, and LO to IF isolation of 40.5 dB. Especially in the case of the mixer, the LO to IF isolation characteristic is much better than that of the 60 GHz monolithic cascode mixer without an open stub microstrip line. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1341–1345, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25191

[1]  R. Stahlmann,et al.  Dual-Gate MESFET Mixers , 1984 .

[2]  Jeng-Han Tsai.  A 42‐GHz transmitter linearization using predistortion IF amplifier , 2009 .

[3]  R. Kraemer,et al.  60 GHz Receiver Building Blocks in SiGe BiCMOS , 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[4]  Katsuyoshi Washio,et al.  SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems , 2003 .

[5]  Ja-Yol Lee,et al.  A 60 GHz mixer using 0.25 μm SiGe BiCMOS technology , 2008 .

[6]  H. Zirath.  Development of 60 GHz front end circuits for high data rate communication systems in Sweden and Europe , 2003, 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..

[7]  K. Kamogawa,et al.  Compact LNA and VCO 3-D MMICs using commercial GaAs PHEMT technology for V-band single-chip TRX MMIC , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[8]  Kyung Hyun Park,et al.  40 Gbps All-Optical 3R Regeneration and Format Conversion with Related InP-Based Semiconductor Devices , 2007 .

[9]  Min-Soo Kang,et al.  PA and LNA for millimeter-wave WPAN using 90 nm CMOS process , 2009 .

[10]  Je-Soo Ko,et al.  Design and Implementation of Open‐Loop Clock Recovery Circuit for 39.8 Gb/s and 42.8 Gb/s Dual‐Mode Operation , 2008 .

[11]  Woojin Chang,et al.  A 60 GHz Medium Power Amplifier for Radio-over-Fiber System , 2007 .

[12]  K. Yamanoguchi,et al.  High performance 60-GHz coplanar MMIC LNA using InP heterojunction FETs with AlAs/InAs superlattice layer , 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).