Analytical modelling of the MOS transistor

Generic analytical expressions useful for the modeling of the MOSFET operation as a function of gate and drain biases are presented. Both, the linear and the non-ohmic regimes of operation are analyzed. Analytical expressions for the drain current, the transconductance, the output conductance, the noise spectral density, and the current fluctuation intensity are provided not only for room temperature but also for the liquid helium temperature range where a specific mobility law is required. Es werden analytische Ausdrucke angegeben, die fur die Modellierung des MOSFET-Betriebs als Funktion von Gate- und Drain-Vorspannungen nutzlich sind. Sowohl der lineare als auch der nicht-ohmsche Betriebsbereich werden analysiert. Analytische Ausdrucke fur den Drainstrom, die Steilheit, den Ausgangsleitwert, die spektrale Rauschdichte und die Intensitat der Stromfluktuationen werden nicht nur fur Zimmertemperatur sondern auch fur den Temperaturbereich des flussigen Heliums angegeben, wo ein spezifisches Beweglichkeitsgesetz erforderlich ist.

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