论文信息 - GaAs/AlGaAs multiple quantum well optical modulator using multilayer reflector stack grown on Si substrate

GaAs/AlGaAs multiple quantum well optical modulator using multilayer reflector stack grown on Si substrate

We report the first pin multiple quantum well reflection modulator grown on Si with a quarter-wave stack dielectric mirror. The structures demonstrated were grown by MBE, with a 75 period MQW, and achieved a relative change in reflectivity of 31% with 8 V applied bias at 865 nm. The absolute change in reflectivity was 17%.

[1] H. Okamoto,et al. Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices , 1987 .

[2] L. Coldren,et al. Electrically tunable Fabry–Perot mirror using multiple quantum well index modulation , 1988 .

[3] Hadis Morkoç,et al. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates , 1986 .

[4] W. Wiegmann,et al. High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure , 1983, 1983 International Electron Devices Meeting.

[5] J. P. Gowers,et al. Structural and optical properties of III–V quantum wells grown on Si , 1989 .

[6] Wood,et al. Electric field dependence of optical absorption near the band gap of quantum-well structures. , 1985, Physical review. B, Condensed matter.

[7] D. Miller,et al. Multiple quantum well reflection modulator , 1987 .