Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure

GaN/In0.05Ga0.95N/Al0.15Ga0.85N double heterostructures doped with Zn and Si, used in Nichia LEDs, are investigated. Electrical, electroluminescent and photoluminescent properties are presented and discussed. Blue photoluminescence (PL) is analyzed to obtain optical transition parameters (phonon coupling strength and zero-phonon line position) involved in formation of the impurity-related emission band. With a minor modification of parameters for Zn centers in GaN, a satisfactory fit is achieved for PL spectra.