4-terminal relay technology for complementary logic

A 4-terminal (4T) relay technology is proposed for complementary logic circuit applications. The advantage of the 4T relay design is that it provides a means for electrically adjusting the switching voltage; as a result, a 4T relay can mimic the operation of either an n-channel or p-channel MOSFET. Fabricated 4T relays exhibit good on-state current (Ion ≫ 700µA for VDS = 1V) and zero off-state leakage current. Low-voltage switching (≪ 2V) and low switching delay (100ns) are demonstrated by appropriately biasing the body terminal. Endurance exceeds 109 on/off cycles without stiction or wear issues. Complementary operation is demonstrated in a functional relay inverter circuit.

[1]  Vladimir Stojanovic,et al.  Integrated circuit design with NEM relays , 2008, 2008 IEEE/ACM International Conference on Computer-Aided Design.

[2]  Tsu-Jae King Liu,et al.  Design and reliability of a micro-relay technology for zero-standby-power digital logic applications , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[3]  R. Howe,et al.  Design Considerations for Complementary Nanoelectromechanical Logic Gates , 2007, 2007 IEEE International Electron Devices Meeting.

[4]  M. Horowitz,et al.  Circuit-level requirements for MOSFET-replacement devices , 2008, 2008 IEEE International Electron Devices Meeting.

[5]  K. R. Williams,et al.  Etch rates for micromachining processing , 1996 .

[6]  C. W. Low,et al.  Characterization of Polycrystalline Silicon-Germanium Film Deposition for Modularly Integrated MEMS Applications , 2007, Journal of Microelectromechanical Systems.

[7]  R. Holm.  Electric contacts; theory and application , 1967 .