Manufacturing method of a semiconductor device

If the present invention is to face the first region and the second region preparing a substrate, the first region and a second form the active pins in the region, and to intersect the active pins side of the active pins, including the second area forming the gate electrode having and forming a Oz (off-set zero) insulating film covering the active fins, and forming the first film a first residual etching to cover the first region and the first hard mask pattern, and implanting first impurities into the active pins of said first hard mask pattern and the first residue and removing the etching film, and forming a first film a second residual etching to cover the second region and a second hard mask pattern, the first implanting second impurities into the active area of ​​the fin, and a method for manufacturing a semiconductor device, comprising: removing the first film 2, an etching residue and a second hard mask pattern is proposed.