High-power and low-noise DFB semiconductor lasers for RF photonic links

High-power and low-noise 1550 nm semiconductor lasers are important for RF photonic links. Due to the effect of laser relaxation-oscillations on the relative intensity noise (RIN), there is RIN peak at the laser relaxation-oscillation frequency, which limits the applications of the lasers. To reduce the RIN magnitude or push the RIN peak to high frequency, many authors have reported various approaches. However, to our knowledge, there has been no reported to demonstrate 1550 nm DFB semiconductor laser with output 200 mW, and RIN below -165 dB/Hz in the frequency range of 0.1 to 20 GHz.