Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications

A Si insulated-gate bipolar transistor (IGBT) phase-leg module is developed for operating at 200°C in hybrid electric vehicle applications utilizing the high temperature packaging technologies and appropriate thermal management. The static and switching electrical characteristics of the fabricated power module are tested at various temperatures, showing that the module can operate reliably with increased but acceptable losses at 200°C. The criterion on thermal performance is given to prevent thermal runaway caused by fast increase of the leakage current during a high temperature operation. Afterward, the thermal management system is designed to meet the criterion, the performance of which is evaluated with experiment. Furthermore, two temperature-sensitive electrical parameters, on-state voltage drop and the switching time, are employed for thermal impedance characterization and the junction temperature measurement during converter operation, respectively. Finally, a 10-kW buck converter prototype composed of the module assembly is built and operated at the junction temperature up to 200°C. The experimental results demonstrate the feasibility of operating Si device-based converters continuously at 200°C.

[1]  Bruno Allard,et al.  An estimation method of the channel temperature of power MOS devices , 2000, 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference Proceedings (Cat. No.00CH37018).

[2]  Quanke Feng,et al.  Heat Transfer of an IGBT Module Integrated With a Vapor Chamber , 2011 .

[3]  A. Mantooth,et al.  High-temperature integration of silicon carbide (SiC) and silicon-on-insulator (SOI) electronics in multichip power modules (MCPMs) , 2005, 2005 European Conference on Power Electronics and Applications.

[4]  Bruno Allard,et al.  State of the art of high temperature power electronics , 2009 .

[5]  D. Graovac,et al.  Power semiconductors for hybrid and electric vehicles , 2011, 8th International Conference on Power Electronics - ECCE Asia.

[6]  H. Mantooth,et al.  Power Conversion With SiC Devices at Extremely High Ambient Temperatures , 2007, IEEE Transactions on Power Electronics.

[7]  C.W. Tipton,et al.  Investigation of power MOSFETs for high temperature operation , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..

[8]  Fred Wang,et al.  Investigation of Si IGBT operation at 200 °C for traction application , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[9]  K.D.T. Ngo,et al.  SiC Wirebond Multichip Phase-Leg Module Packaging Design and Testing for Harsh Environment , 2010, IEEE Transactions on Power Electronics.

[10]  Thomas M. Jahns,et al.  Development of Integrated Modular Motor Drive for Traction Applications , 2011 .

[11]  T. E. Salem,et al.  High-Temperature High-Power Operation of a 100 A SiC DMOSFET Module , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.

[12]  B. McPherson,et al.  A Fully Integrated 300°C, 4 kW, 3-Phase, SiC Motor Drive Module , 2007, 2007 IEEE Power Electronics Specialists Conference.

[13]  L. Dupont,et al.  Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review , 2012, IEEE Transactions on Power Electronics.

[14]  Khai D. T. Ngo,et al.  250°C SiC high density power module development , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[15]  S. Mounce,et al.  Ultra-lightweight, high efficiency SiC based power electronic converters for extreme environments , 2006, 2006 IEEE Aerospace Conference.

[16]  Chuang Liu,et al.  A 55-kW Three-Phase Inverter Based on Hybrid-Switch Soft-Switching Modules for High-Temperature Hybrid Electric Vehicle Drive Application , 2012, IEEE Transactions on Industry Applications.

[17]  Martin Helsper,et al.  Challenges for IGBT modules in hybrid buses , 2009, 2009 13th European Conference on Power Electronics and Applications.

[18]  S. K. Mazumder,et al.  Evaluation of a SiC dc/dc converter for plug-in hybrid-electric-vehicle at high inlet-coolant temperature , 2011 .

[19]  Zhenxian Liang,et al.  Investigation of Si IGBT Operation at 200$\,{}^\circ$ C for Traction Applications , 2013, IEEE Transactions on Power Electronics.

[20]  R.W. Johnson,et al.  The changing automotive environment: high-temperature electronics , 2004, IEEE Transactions on Electronics Packaging Manufacturing.

[21]  L. Tolbert,et al.  Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter , 2013, IEEE Transactions on Power Electronics.

[22]  Roberto Schupbach,et al.  A Novel High Density 100kW Three-Phase Silicon Carbide (SIC) Multichip Power Module (MCPM) Inverter , 2007, APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition.

[23]  Sung Joon Kim,et al.  Implementation of a fully integrated 50 kW inverter using a SiC JFET based six-pack power module , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[24]  H. Kuhn,et al.  On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters , 2009, 2009 13th European Conference on Power Electronics and Applications.

[25]  U. Schlapbach,et al.  1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.